دانلود Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

ترجمه فارسی:Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells
قیمت : 255,000 ریال
شناسه محصول : 2008666
نویسنده/ناشر/نام مجله : IEEE Journal of Photovoltaics
سال انتشار: 2015
تعداد صفحات انگليسي : 8
نوع فایل های ضمیمه : pdf+word
حجم فایل : 867 Kb
کلمه عبور همه فایلها : www.daneshgahi.com
عنوان انگليسي : Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

چکیده

Abstract

We study ion implantation for patterned doping of back-junction back-contacted solar cells with polycrystallinemonocrystalline Si junctions. In particular, we investigate the concept of counterdoping, that is, a process of first implanting a blanket emitter and afterward locally overcompensating the emitter by applying masked ion implantation for the back surface field (BSF) species. On planar test structures with blanket implants, we measure saturation current densities  J0 ,poly of down to 1.0 ± 1.1 fA/cm2 for wafers passivated with phosphorus-implanted poly-Si layers and 4.4 ± 1.1 fA/cm2 for wafers passivated with boron-implanted poly-Si layers. The corresponding implied pseudofill factors pF Fim p l. are 87.3% and 84.6%, respectively. Test structures fabricated with the counterdoping process applied on a full area also exhibit excellent recombination behavior  (J0 ,p o ly = 0 .9 ± 1.1 fA/cm2 , pF Fim p l. = 84 .7%). By contrast, the samples with patterned counterdoped regions exhibit a far worse recombination behavior dominated by a recombination mechanism with an ideality factor n > 1. A comparison with the blanket-implanted test structures points to recombination in the space charge region inside the highly defective poly-Si layer. Consequently, we suggest introducing an undoped region between emitter and BSF in order to avoid the formation of p+ /n+ junctions in poly-Si.

Keywords: Boron Junctions Doping Ion implantation Silicon
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