دانلود Single-electron tunneling based turnstiles: Modeling and applications

Abstract

This  paper  presents  a  compact  analytical  model  for single-electron tunneling (SET) based turnstiles. This model can accurately describe the process of tunneling events involved. The  device  characteristics  produced  by  the  model  are  verified by Monte-Carlo simulation with good agreement. Hybrid SET/MOS  circuit  co-simulations  are  successfully  performed  in Spectre  simulator  by  implementing  the  proposed  model  with  Verilog-A modeling language. Extensive simulation results show the advantages of realizing some application circuits using SET-based turnstiles.