دانلود Analysis for relative intensity noise of optoelectronic integrated device by heterojunction phototransistor and laser diode

Abstract

Analysis for  relative  intensity  noise  (RIN)  is an  important consideration for  the  optimum  design of  system  performance in  most  of  the  optical communication systems. Monolithic integration of  optical and  electronic devices  leads  to  new  characteristics such  as  internal electrical  and  optical  feedback among the  components. This  will  also  affect  the  noise  performance of  the  device.  A  quantitative analysis  for  the RIN performance of an optoelectronic integrated device composed of a laser diode (LD) and a heterojunction phototransistor (HF’T) is  presented. We  consider effects  of  the  internal optical feedback from  the  LD  to  the  HPT,  and  of  avalanche  multiplication in the  device.  It is found  that  the  internal  optical feedback improves the RIN of  the  device, especially near the  threshold.